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ion diffusion into silicon carbide equipment

Process technology for silicon carbide devices().PDF

2017-4-30 · Process technology for silicon carbide devices() .PDF 200 : , ion implantation and diffusion (3), wet and

Si diffusion in magnetron sputtered silicon carbide …

Self-diffusion of silicon in magnetron sputtered silicon carbide films deposited on different substrates (crystalline silicon and glassy carbon) is investigated. Since crystallization of amorphous silicon carbide films strongly depends on the substrate, the diffusivity of silicon is …

Thermal Diffusion of Dopants in Silicon Carbide

A detailed thermodynamic study confirmed the possibility of phosphorus and boron diffusion in silicon carbide using phosphorus oxide and boron oxide as sources of phosphorus and boron dopants. Another variation of the VAID technique is to use the formation of silicides to assist in …

Silicon oxycarbide glass-graphene composite paper

2016-3-30 · Silicon and graphene are promising anode materials for lithium-ion batteries because of their high theoretical capacity; however, low volumetric energy density, poor efficiency and instability in

Boron and aluminum diffusion into 4H–SiC substrates

Boron and aluminum doping by diffusion into n-type 4H–SiC Si-face substrates was carried out at the temperatures of 1800–2000. °C.. Secondary ion mass spectroscopy (SIMS) was employed to obtain the impurity profiles, which showed that linearly graded boron profile and shallow aluminum profiles have been achieved, which may be a promising appliion in SiC device fabriion, such as p

An Overview of Ion Implantation

What is the general principle of Ion implantation? Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to high energy, and a target chaer, where the ions impinge on a target, which is the material to be implanted.

Semiconductor Solutions | S & D Materials, LLC.

S & D Materials sells, repairs and overhauls spindles, feedthroughs, rotary gas unions in semiconductor tools from TEL, Varian, AMAT, Novellus & Axcelis for Diffusion, Ion Implantation & CVD. We also repair and rebuild custom ferrofluid seals from Ferrotec, Rigaku, EKK and others.

Electron-beam physical vapor deposition - Wikipedia

2019-4-30 · Electron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is boarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase.

Study of iodine diffusion in silicon carbide - …

Study of iodine diffusion in silicon carbide. carbide coatings of typically 35 μm thicknesses in fuel kernels should therefore effectively prevent iodine release into the reactor’s primary cooling system during their total resident time in the core. However, operating at higher temperatures, as envisaged in some advanced design studies

Diffusion of boron in silicon carbide - ScienceDirect

For our diffusion experiments the sample holder is driven into the region of maximum temperature after the set point is reached. The diffusion process is terminated by pulling the sample holder out of the high-temperature area. The distribution of B in the as-grown and annealed samples were measured with secondary ion mass spectrometry (SIMS).

Silicon Furnace, Silicon Furnace Suppliers and

Alibaba offers 11,196 silicon furnace products. About 14% of these are industrial furnace, 12% are laboratory heating equipments, and 1% are temperature instruments. A wide variety of silicon furnace options are available to you, such as melting furnace, heat treatment furnace, and sintering furnace.

An Overview of Ion Implantation

What is the general principle of Ion implantation? Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to high energy, and a target chaer, where the ions impinge on a target, which is the material to be implanted.

SiC substrate: 2017

2017-12-3 · PAM-XIAMEN provide for SiC 4H N/SI type substrate,SiC 6 N/SI type substrate. SiC substrate PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H

Exhibitors | International Conference on Silicon …

GT has a long history with developing silicon carbide equipment and solutions going back more than 15 years. The company pioneered the growth of two- and four-inch silicon carbide boules in its SiClone™ sublimation furnaces. Some of the largest captive producers of silicon carbide are using technology developed by GT.

Silicon Carbide and Related Materials 2004 | p.15

Silicon Carbide and Related Materials 2004 are demonstrated. Trials to achieve a low sheet resistance are described for n-type and p-type doping. Implantation into the (11-20) face is also presented. ion implanter for SiC device. We report the fabriion of a compact 100 kV ion implanter. In order to miniaturize the equipment, an ion

SiC Coating In An Ion Implanter - Varian …

2015-4-2 · Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chaer. In some eodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Comparison of Solid-State Microwave Annealing with

2007-11-7 · Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC SIDDARTH G. SUNDARESAN,1 MULPURI V. RAO,1,6 YONGLAI TIAN,2 JOHN A. SCHREIFELS,3 MARK C. WOOD,4 KENNETH A. JONES,4 and ALBERT V. DAVYDOV5 1.—Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA

Diffusion Mechanism of Lithium Ion through Basal …

2012-4-30 · Coexistence of both edge plane and basal plane in graphite often hinders the understanding of lithium ion diffusion mechanism. In this report, two types of graphene samples were prepared by chemical vapor deposition (CVD): (i) well-defined basal plane graphene grown on Cu foil and (ii) edge plane-enriched graphene layers grown on Ni film.

Thermal Diffusion of Dopants in Silicon Carbide

2015-3-24 · doping during epitaxial growth, thermal diffusion, and ion implantation. These methods require at the surface to allow impurities to diffuse more easily into the surface region. While solid-state diffusion of phosphorus in silicon is an experimentally proven method, solid-state diffusion of phosphorus in silicon carbide is relatively

What is Ion Implantation?

Ion implantation is low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. The components of ion implantation are often made of TZM, molybdenum, tungsten because these materials could perform well in the harsh environment.

Diffusion Mechanism of Lithium Ion through Basal …

2012-4-30 · Coexistence of both edge plane and basal plane in graphite often hinders the understanding of lithium ion diffusion mechanism. In this report, two types of graphene samples were prepared by chemical vapor deposition (CVD): (i) well-defined basal plane graphene grown on Cu foil and (ii) edge plane-enriched graphene layers grown on Ni film.

Silicon Carbide Powder Appliion - Home - …

Silicon Carbide Powder Appliion: Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels and other abrasive products for over one hundred years.

Influence of radiation damage on diffusion of fission

2016-11-10 · No diffusion into the undamaged bulk is detected at temperatures up to 1500 °C. The observed diffusion be-haviour is explained by a defect related trapping and release mechanism. Normal grain boundary diffusion of silver and iodine occurs in CVD-SiC. Keywords silicon carbide, diffusion, radiation damage

Comparison of Solid-State Microwave Annealing with

2007-11-7 · Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC SIDDARTH G. SUNDARESAN,1 MULPURI V. RAO,1,6 YONGLAI TIAN,2 JOHN A. SCHREIFELS,3 MARK C. WOOD,4 KENNETH A. JONES,4 and ALBERT V. DAVYDOV5 1.—Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA

Deposition of Silicon Oxide, Silicon Nitride and Silicon

2018-10-8 · AIMCAL 2007 Deposition of Silicon Oxide, Silicon Nitride and Silicon Carbide Thin Films by PEVCD 6 Silicon Carbide The utility of silicon oxide coatings is limited by its applicability for good barrier properties. There appears to be a fundamental limit to how effective SiO 2 thin films can be to water vapor transport9

US9384937B2 - SiC coating in an ion implanter - …

An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chaer, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are

''Silver Ion Implantation and Annealing in CVD Silicon

2012-11-19 · The goals of the ion implantation studies were to implant a measurable quantity of silver in silicon carbide and, moreover, to implant the silver deep enough so that it would not migrate out of the sample during subsequent annealing. Based on silver diffusion coefficients reported in …

What is Ion Implantation?

Ion implantation is low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. The components of ion implantation are often made of TZM, molybdenum, tungsten because these materials could perform well in the harsh environment.

Poco Graphite, Inc. Properties and Characteristics of

2015-4-1 · Poco Graphite, Inc. (POCO) perfected a unique, proprietary process for producing silicon carbide that is dif-ferent from conventional silicon carbides, the properties and characteristics of which are outlined in this docu-ment. SUPERSiC was developed as an alternative solution to the traditional molded silicon carbide components.

(PDF) Field Enhanced Diffusion of Nitrogen and Boron …

Field Enhanced Diffusion of Nitrogen and Boron in 4H–Silicon Carbide The incorporation of dopants into 4H-Silicon Carbide requires the exclusive use of ion implantation technology

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